| PART |
Description |
Maker |
| 3DD2553 3DD2553-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2553 FOR LOW FREQUENCY
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2553 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD4460 3DD4460-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD4460 FOR LOW FREQUENCY
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD4460 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5010A-O-A-N-D 3DD5310A |
CASE-RATED BIPOLAR TRANSISTOR 3DD5310 FOR LOW FREQUENCY AMPLIFICATION
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5040 3DD5040-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5040 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD2109 3DD2109-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2109 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD2901-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2901 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| IRG4PC40KPBF |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
|
International Rectifier
|
| HDMP-1014 HDMP-1012 |
Bipolar Transistor; Collector Emitter Voltage, Vceo:400V; Transistor Polarity:N Channel; Power Dissipation:250W; C-E Breakdown Voltage:400V; DC Current Gain Min (hfe):10; Collector Current:50A; Package/Case:TO-3
Phase Lock Loop (PLL) IC; Number of Circuits:1; Package/Case:14-DIP; Mounting Type:Through Hole 4Low成本千兆速率发接收芯片
|
Agilent(Hewlett-Packard)
|
| TAN250A |
Case Outline 55AW / Style 1
high power COMMON BASE bipolar transistor.
|
GHZTECH[GHz Technology]
|
| MGY25N120D_D ON1933 MGY25N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
From old datasheet system
IGBT & DIODE IN TO-264 25 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
|
ONSEMI[ON Semiconductor]
|
| HCA0207 |
Bipolar Transistor; Package/Case:TO-3P; Current Rating:12A; Voltage Rating:800V
Carbon Film Resistors, Power Type
From old datasheet system
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
